| PART |
Description |
Maker |
| EMA4 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors
|
Rohm
|
| EMA5 FMA5AT148 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| UMA1N1 |
−100mA / −50V Complex digital transistors (with built-in resistors)
|
Rohm
|
| UMG5N |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| 2SC945 2SA812 NTC2517 2SC2001 NTC2751 NTC2654 2SC1 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-92
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-23VAR
Transistor - Datasheet Reference
TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),TO-92
TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-236VAR
From old datasheet system
|
NEC Electron Devices
|
| 2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五（巴西）总裁|8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 500mA的一（c）|
|
Central Semiconductor, Corp.
Microsemi, Corp.
|
| BCR15PN |
Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50V
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| DTC143ZAA DTC114GFA DTC124GFA DTC115GFA DTC123YFA |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 30mA的一（c）|2VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 500NA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
|
Samsung Semiconductor Co., Ltd.
Rohm Co., Ltd.
|
| 2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE.
|
Isahaya Electronics Corporation
|
| DTA123EE DTA123EKA |
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| DTA144VKAT146 |
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
