| PART |
Description |
Maker |
| NX6353EP27-AZ |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
California Eastern Labs
|
| BHP-300 |
High Pass Filter 50楼? 290 to 3000 MHz
High Pass Filter 50惟 290 to 3000 MHz
High Pass Filter 50Ω 290 to 3000 MHz
|
Mini-Circuits
|
| VCM4B10/00 |
KAMERA MINI PCB FARBE 330 ZEILEN 3.8MM 卡美拉迷你板FARBE 330 ZEILEN 3.8毫米
|
ECM Electronics, Ltd.
|
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| LDS-AA106RI |
290 E. HELEN ROAD
|
LUMEX INC.
|
| SSF-LXH240GGD |
290 E, HELEN ROAD PALATINE, IL 60067-6976
|
LUMEX INC.
|
| M68710EL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER 290-330MHz 2W FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PAK-VA |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| PAK-VI |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| 2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
| SR310 |
310.00 MHz One-Port SAW Resonator
|
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