PART |
Description |
Maker |
AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
2SJ0536 |
Silicon P-Channel MOS FET Silicon P-Channel MOS FET 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor] PANASONIC CORP
|
RJK0701DPP-E0 RJK0701DPP-E0-15 RJK0701DPP-E0-T2 |
N-Channel MOS FET 75 V, 100 A, 3.8 m N-Channel MOS FET 75 V, 100 A, 3.8 m?
|
Renesas Electronics Corporation
|
RJK1002DPN-E0-T2 |
N-Channel MOS FET 100 V, 70 A, 7.6 m
|
Renesas Electronics Corporation
|
2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
MRF275G MRF275 |
N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET
|
MACOM[Tyco Electronics]
|
SD2107DD |
-100 V, 5 ohm, P-channel enhancement-mode D-MOS power FET
|
Topaz Semiconductor
|
H7N1004AB |
30 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
NP100P06PDG-E2-AY NP100P06PDG-E1-AY NP100P06PDG-15 |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING P-CHANNEL POWER MOS FET
|
HIROSE ELECTRIC Co., Ltd. American Bright Optoelectronics, Corp. Renesas Electronics Corporation
|
NP100P06PLG-E1-AY NP100P06PLG-E2-AY NP100P06PLG-15 |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING P-CHANNEL POWER MOS FET
|
Fujitsu, Ltd. HIROSE ELECTRIC Co., Ltd. Renesas Electronics Corporation
|
2SJ540 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|