PART |
Description |
Maker |
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
NTLUF4189NZ NTLUF4189NZTAG NTLUF4189NZTBG |
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
|
ON Semiconductor
|
NTMD4184PF NTMD4184PFR2G |
Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode
|
ON Semiconductor
|
NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
FDFMA3N10908 |
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated Diodes, Inc.
|
NSR0530P2T5G |
Schottky Barrier Diode 30V 0.5A low VF SOD-923 Schottky Diode 0.5 A, 30 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
|
FDFS2P753AZ |
Integrated P-Channel PowerTrenchMOSFET and Schottky Diode -30V, -3A, 115m 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
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