| PART |
Description |
Maker |
| MMA20312BV |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor...
|
| BFP720F |
C Heterojunction Wideband RF Bipolar Transistor
|
Infineon Technologies AG
|
| MMA20312BT1 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor
|
| MMG3009NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MMG3012NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3014NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
