| PART |
Description |
Maker |
| NX6308GH NX6308GH-AZ |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| 140XBP01000 |
Modicon Quantum
|
List of Unclassifed Man...
|
| LD808-2-TO3 |
Output Power: 2.0w(CW) Variety of stripe width Efficient quantum well structure
|
Roithner LaserTechnik GmbH
|
| STK14C88-M |
32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
Simtek
|
| PY14 H3YN-2-DC24 PYF08F |
Miniature Timer with Multiple Time Ranges and Multiple Operating Modes
|
Omron Electronics LLC
|
| M57788UH |
470-490 MHz 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| EQ-431L |
EQ-431L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-731L |
EQ-731L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| LDM-0808-1000-93 |
CW Output Power: 1 W Typical 808 nm Emission Wavelength High-efficiency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| PD8931 PD8001 |
High quantum effciency, Very small dark current, High speed response
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
