PART |
Description |
Maker |
K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 256Mb H-die DDR SDRAM Specification
|
Atmel, Corp. SAMSUNG SEMICONDUCTOR CO. LTD.
|
V59C1256804QALP19E V59C1256808QALP19E V59C1G01164Q |
32M X 8 DDR DRAM, BGA68 64M X 16 DDR DRAM, BGA92
|
PROMOS TECHNOLOGIES INC
|
K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM 32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
EDD5108ADTA-6BLI EDD5116ADTA-6BLI EDD5116ADTA-7ALI |
32M X 16 DDR DRAM, 0.75 ns, PDSO66 512M bits DDR SDRAM WTR (Wide Temperature Range)
|
ELPIDA MEMORY INC
|
HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
W9751G6JB-25I W9751G6JB-18 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 32M X 16 DDR DRAM, 0.35 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
W9751G6IB-25 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
HY5DU56822ELF-J |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
E5116ABSE-4C-E |
32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
ELPIDA MEMORY INC
|
D5116ADTA-5CLI-E |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
ELPIDA MEMORY INC
|
W3E32M72SR-250SBC |
32M X 72 DDR DRAM, 0.8 ns, PBGA208
|
MICROSEMI CORP-PMG MICROELECTRONICS
|