| PART |
Description |
Maker |
| IRF530PBF |
Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements
|
International Rectifier
|
| IPT1608-SEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0408-05B |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| LM2576T-ADJ LM2576TV-AJD LM2576TV-5 LM2576T-5 LM25 |
Easy switcher 1.0 A step-down voltage regulator
EASY SWITCHERE 3.0 A STEP-DOWN VOLTAGE REGULATOR
EASY SWITCHERE3.0 A STEP-DOWN VOLTAGE REGULATOR 3 A SWITCHING REGULATOR, 63 kHz SWITCHING FREQ-MAX, PSFM5
EASY SWITCHERE3.0 A STEP-DOWN VOLTAGE REGULATOR 3 A SWITCHING REGULATOR, 63 kHz SWITCHING FREQ-MAX, PSSO5
|
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| IPT1208-SEA IPT1208-CEA IPT1208-BEA IPT1208-TEA |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| LXDC2HL10A-080 LXDC2HL1DA-087 LXDC2HL25A-053 LXDC2 |
Low EMI noise and small footprint due to Murata’s inductor-embedded ferrite substrate technology
|
Murata Manufacturing Co., Ltd.
|
| PIC16F873T-10E/SO PIC16F873T-20/SO PIC16F873T-20I/ |
A newer device is available. Please consider PIC16F873A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F877A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F874A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F876A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
8-bit CMOS FLASH microcontroller
|
Microchip
|
| IPT1206-CEB IPT1206-SEB IPT1206-TEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| IPT12Q06-CEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| L2C3-4080107E06000 L2C3-4080105B06000 L2C3-4080105 |
Unsurpassed light quality and CBCP due to small LES
|
Lumileds Lighting Compa...
|
