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IRFU322 - 2.3 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET

IRFU322_7680855.PDF Datasheet

Part No.

IRFU322

Description

2.3 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size

173.71K / 5 Page

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Part: IRFU320

Maker: IR

Pack: TO-251

Stock: Reserved

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ppm, 1800 ohm, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 50 ppm, 13000 ohm, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 50 ppm, 11000 ohm, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 50 ppm, 1100 ohm, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 50 ppm, 1200 ohm, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 50 ppm, 130000 ohm, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 50 ppm, 1300 ohm, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, METAL FILM, 3 W, 5 %, 50 ppm, 10000 ohm, THROUGH HOLE MOUNT RADIAL LEADED Wirewound Resistors, Commercial Power, Vertical Mount	Vishay Intertechnology, Inc. VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
APT40M70B2VFRG APT40M70LVFRG	Power FREDFET; Package: T-MAX [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA	Microsemi, Corp.
MTP4N40E MTP4N40E-D	TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate	Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
RM12F0.0115OHMCT RM12F0.0124OHMCT RM12F0.011OHMCT	RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0115 ohm, SURFACE MOUNT, 1206 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0124 ohm, SURFACE MOUNT, 1206 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.011 ohm, SURFACE MOUNT, 1206 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0113 ohm, SURFACE MOUNT, 1206 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0107 ohm, SURFACE MOUNT, 1206 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0105 ohm, SURFACE MOUNT, 1206 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0118 ohm, SURFACE MOUNT, 1206 CHIP	Cal-Chip Electronics
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NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N	0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION	Marktech Optoelectronics Ecliptek, Corp. Daishinku, Corp. Electronic Theatre Controls, Inc. 飞思卡尔半导体(中国)有限公司 Pulse Engineering, Inc. HIROSE ELECTRIC Co., Ltd.
IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P	FAIRCHILD SEMICONDUCTOR CORP
FRM244D FN3230 FRM244R FRM244H	12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs 12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system	INTERSIL[Intersil Corporation]
SGSP575	10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	STMICROELECTRONICS
2N6760TXV	5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	MICROSEMI CORP
RFP8P10	8A, 100V, 0.400 Ohm, P-Channel Power MOSFET	Intersil Corporation

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