| PART |
Description |
Maker |
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory
512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
|
| AM29LV160MB70RPCI AM29LV160MT85WAI AM29LV160MB90EI |
Flash Memory IC 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
|
Spansion, Inc.
Advanced Micro Devices
|
| AT91FR40162SB-CU AT91FR40162SB AT91FR40162SBPRE AT |
Flash memory in a single compact 121-ball BGA package
1024K Words 16-bit Flash Memory (2M bytes)
|
ATMEL Corporation
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| EN29LV640U EN29LV640U-70R EN29LV641H EN29LV641H-70 |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
|
Eon Silicon Solution Inc.
ETC
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| EN29LV641H EN29LV641L EN29LV641L-70TCP EN29LV641L- |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
|
Eon Silicon Solution Inc.
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| W25P40-VSNI W25P40-VSNIG W25P40 W25P20 W25P10-VSNI |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
4M X 1 FLASH 2.7V PROM, PDSO8 0.150 INCH, GREEN, PLASTIC, SOIC-8
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI
|
Winbond Electronics, Corp.
|
