| PART |
Description |
Maker |
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AD605AR-REEL AD605AR-REEL7 AD605BR-REEL AD605BR-RE |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems
|
Analog Devices
|
| AGB3312 AGB3312S24Q1 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
Gain Block Amplifiers
50з High Linearity Low Noise Internally Biased Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
| AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
Gain Block Amplifiers
50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| EPB018A5 EPB018A7 |
4-5V high super low noise high gain heterojunction power FET
Super Low Noise High Gain Heterojunction FET
|
Excelics Semiconductor, Inc.
|
| ASL563 |
High Gain, Low Noise Amplifier
|
Advanced Semiconductor Business Inc.
|
| BGA428 |
BGA428 High Gain, Low Noise Amplifier
|
Infineon Technologies A...
|
