| PART |
Description |
Maker |
| HAT1021R |
5.5 A, 20 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
|
| IRFR2605TR |
19 A, 55 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
|
| IRF250 |
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRFP250 FN2330 |
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
From old datasheet system
|
Intersil
|
| 2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FQA34N25 |
250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| APT30M85BVR APT30M85 |
POWER MOS V 300V 40A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| MTD15N06VL MTD15N06VL-1 MTD15N06VLT4 |
15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET
|
ON SEMICONDUCTOR
|
|
