| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SB1219A |
Large collector current IC. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SD1366A |
Low frequency power amplifier Collector-base voltage VCBO 30 V
|
TY Semiconductor Co., Ltd
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
| 2SC4081 |
Low Cob. Cob=2.0pF (Typ.) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| 2SA1617 |
Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
| 2N2356 |
COLLECTOR TO BASE VOLTAGE
|
New Jersey Semi-Conductor Products, Inc.
|
