| PART |
Description |
Maker |
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
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Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| SS2PH9-E3_84A SS2PH9-E3_85A SS2PH9HE3_84A SS2PH9HE |
High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| 125293U020AJ1B 125114U005AJ1B 125114U6R3AC1B 12523 |
The Pace-Setter for Long Life and High Temperature
Type 125 -55 篓卢C to 125 篓卢C, Ultra-High Temperature, Military Grade
Type 125 -55 潞C to 125 潞C, Ultra-High Temperature, Military Grade
Type 125 -55 oC to 125 oC, Ultra-High Temperature, Military Grade
Type 125 -55 ìC to 125 ìC, Ultra-High Temperature, Military Grade
|
Cornell Dubilier Electr...
List of Unclassifed Man...
ETC
List of Unclassifed Manufacturers
http://
Cornell Dubilier Electronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HVS0805 HVS2010 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
| TMPG06-10 TMPG06-10A TMPG06-11 TMPG06-11A TMPG06-1 |
Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| 303DMQ600 |
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
|
| 32209340 32209341 32209345 |
MR series elements are designed for applications where high vibration resistance as well as high temperature stability are vital
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| IHTH-1125MZ-5A |
High Current Through Hole Inductor, High Temperature Series
|
Vishay Siliconix
|
| 2SC3295 |
NPN EPITAXIALTYPE (AUDIO FREQUENC AMPLIFIER/ SWITCHING APPLICATIONS)
NPN EPITAXIALTYPE (AUDIO FREQUENC AMPLIFIER, SWITCHING APPLICATIONS)
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Toshiba Corporation
Toshiba Semiconductor
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