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ICE60N160B - N-Channel Enhancement Mode MOSFET

ICE60N160B_7703750.PDF Datasheet


 Full text search : N-Channel Enhancement Mode MOSFET


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MTP3N60FI MTP3N60 3037 N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET)
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意法半导
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SD219 SD217DE SD217DR SD219DR SD217 SD217CHP SD219 25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET
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IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI N-channel enhancement mode power MOS transistor, 500V, 2.2A
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SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
APT6025BFLL APT6025SFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT10021JFLL POWER MOS 7 1000V 37A 0.210 Ohm
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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STU9NA60 N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式功率MOS晶体
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SD1107DD SD1107CHP SD1117DD SD1117CHP 100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET
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ICE60N160B Mosfet ICE60N160B interrupt ICE60N160B found ICE60N160B complimentary against ICE60N160B maxim
 

 

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