| PART |
Description |
Maker |
| STW48NM60N |
N-channel 600 V, 0.055 Ω typ., 44 A MDmesh II Power MOSFET in a TO-247 package
N-channel 600 V, 0.055 Ω typ., 44 A MDmesh?/a> II Power MOSFET in a TO-247 package
|
STMicroelectronics
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| CS16-06GO2 CS5-06GO2 CS5-02GO2 CS112-12IO8 CS52-14 |
30 A, 600 V, SCR, TO-208AA
18.055 A, 600 V, SCR, TO-64
18.055 A, 200 V, SCR, TO-64
220 A, 1200 V, SCR, TO-209AC
120 A, 1400 V, SCR, TO-209AC
|
IXYS CORP
|
| STQ1HN60K3-AP |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
|
ST Microelectronics
|
| STP18NM60N STW18NM60N STB18NM60N STF18NM60N |
N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
|
STMicroelectronics
|
| STFI28N60M2 STF28N60M2 |
N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages
|
STMicroelectronics
|
| STB18NM60ND |
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
|
ST Microelectronics
|
| STW40N60M2 STFI40N60M2 |
N-channel Power MOSFET
N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
|
STMicroelectronics N.V.
|
| IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
|
