| PART |
Description |
Maker |
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT1004 NPT1004-15 |
Gallium Nitride 28V, 45W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT1007 NPT1007-15 |
Gallium Nitride 28V, 200W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| TDA7490 |
25W + 25W STEREO CLASS-D AMPLIFIER 50W MONO IN BTL
|
STMICROELECTRONICS[STMicroelectronics]
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
| 74W-502 74W103 74W201 |
TRIMMER 6.35MM CERMET MEHR 5K 0.25W
NEW GEN G AMP MOSFET DRIVER, -40C to 125C, 16-SOIC 300mil, T/R 修边.35mm的金属陶瓷伊朗Mehr 10,000 0.25W
4.5A DUAL MOSFET DRVR INV AND N-INV, -40C to 125C, 8-DFN, T/R
|
SIEMENS AG
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STK4141V |
AF Power Amplifier (Split Power Supply) (25W 25W min / THD = 0.08%)
AF Power Amplifier (Split Power Supply) (25W 25W min, THD = 0.08%)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
