| PART |
Description |
Maker |
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| STK4192 STK4192II |
AF Power Amplifier (Split Power Supply) (50W 50W min, THD = 0.4%)
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| D45VM7 D44VM D44VM1 D44VM10 D44VM4 D44VM7 D45MV10 |
POWER TRANSISTORS(8A,30-80V,50W)
POWER TRANSISTORS(8A,30-80V,50W) 功率晶体管（8A30 - 80V的，50瓦）
POWER TRANSISTORS(8A/30-80V/50W)
|
MOSPEC[Mospec Semiconductor]
Hangzhou Silan Microelectronics Co., Ltd.
|
| DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
