PART |
Description |
Maker |
NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
NPT1007 NPT1007-15 |
Gallium Nitride 28V, 200W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
V48SH1R840PRFH V48SH1R840PNFA V48SH1R840PNFH |
Delphi Series V48SH, 1/16th Brick 100W DC/DC Power Modules: 48V in, 1.8V, 40A out
|
Delta Electronics, Inc.
|
Q48SL1R835NRFA Q48SL3R330NRFA A48SL1R535NKFA A48SL |
Delphi Series Q48SL, 100W Quarter Brick Family DC/DC Power Modules: 48V in, 1.5V/35A out
|
DELTA[Delta Electronics, Inc.]
|
STK4231V STK4231 |
AF Power Amplifier(Split Power Supply)(100W+100W min, THD=0.08%)
|
SANYO[Sanyo Semicon Device]
|
LTC1921 1921F LTC1921CS8 LTC1921IS8 LTC19211 LTC19 |
Dual 48V Supply and Fuse Monitor Dual ?48V Supply and Fuse Monitor From old datasheet system Dual -48V Supply and Fuse Monitor; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to 70°C 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
|
Linear Technology, Corp.
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
RFP-100200N4X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
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