| PART |
Description |
Maker |
| 2N5166 2N4147 2N1600 2N1598 2N893 2N899 |
20 A, 400 V, SCR
0.25 A, 100 V, SCR, TO-52
8 A, 50 V, SCR, TO-64
1.6 A, 300 V, SCR, TO-5
0.25 A, 15 V, SYMMETRICAL GTO SCR, TO-18
0.25 A, 100 V, GATE TURN-OFF SCR, TO-18
|
SEMITRONICS CORP
|
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
0.8 A, 400 V, SCR, TO-92
0.8 A, 600 V, SCR, TO-92
0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
| MCR22-6-D MCR22-2RL1 |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate SCR
|
ON Semiconductor
|
| ST2100C..RSERIES ST2100C42R3L ST2100C30R0 ST2100C3 |
3850 A, 3400 V, SCR
3850 A, 3000 V, SCR
3850 A, 3800 V, SCR
3850 A, 4000 V, SCR
4000V 1770A Phase Control SCR in a A-36 (R-Puk) package
3600V 1770A Phase Control SCR in a A-36 (R-Puk) package
3800V 1770A Phase Control SCR in a A-36 (R-Puk) package
3000V 1770A Phase Control SCR in a A-36 (R-Puk) package
3200V 1770A Phase Control SCR in a A-36 (R-Puk) package
4200V 1770A Phase Control SCR in a A-36 (R-Puk) package
PHASE CONTROL THYRISTORS
DIODE ZENER DUAL COMMON-ANODE 300mW 36Vz 5mA-Izt 0.05 0.1uA-Ir 27 SOT-23 3K/REEL 相位控制晶闸
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| DG306AE25 |
Gate Turn-off Thyristor 353.25 A, 2500 V, GATE TURN-OFF SCR
|
Dynex Semiconductor, Ltd.
|
| R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR
2398 A, 200 V, SCR
5260 A, 400 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| CS3P-40B CS3P-40D CS3P-40M CS3P-40N CS3P-40P CS3P- |
40 A, 1000 V, SCR TO-3P, 3 PIN
40 A, 1200 V, SCR TO-3P, 3 PIN
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| D2P4M |
Standard Gate SCR
|
DnI
|
|
