| PART |
Description |
Maker |
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| HN2E05J |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
| CD4148 CD41481 |
LEADLESS CHIP SIGNAL DIODE High Speed Switching
|
First Components International
|
| UPD42S4800LLE-A10 UPD424800LLE-A10 UPD424800LG5-A8 |
x8 Fast Page Mode DRAM
RoboClockII™ Junior, High Speed Multifrequency PLL Clock Buffer
Programmable Skew Clock Buffer
RoboClock® High-speed Multi-phase PLL Clock Buffer
Low Skew Clock Buffer x8快速页面模式的DRAM
RoboClock® High-speed Multi-phase PLL Clock Buffer
|
NEC TOKIN, Corp.
|
| STA8058 |
Teseo high performance GPS multi chip module (MCM)
Teseo⑩ high performance GPS multi chip module (MCM)
|
STMicroelectronics
|
| BAS16TDW |
Surface Mount Switching Multi-Chip Diode Array
|
Weitron Technology
|
| MMBD4448HSDW |
Surface Mount Switching Multi-Chip Diode Array
|
Weitron Technology
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| CY7B993V-5AC CY7B993V-7AC CY7B994V CY7B994V-5AC CY |
High-Speed Multi-Phase PLL Clock Buffer
|
Cypress Semiconductor
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
