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KMM466F203CS2 - 2M x 64 DRAM SODIMM(2M x 64 ?ㄦ?RAM妯″?)

KMM466F203CS2_7757327.PDF Datasheet


 Full text search : 2M x 64 DRAM SODIMM(2M x 64 ?ㄦ?RAM妯″?)
 Product Description search : 2M x 64 DRAM SODIMM(2M x 64 ?ㄦ?RAM妯″?)


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PART Description Maker
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY    3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY 4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
VG2618165CJ-5 DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
Vanguard International Semiconductor
CYM7232 CYM7264 7232SP DRAM Accelerator Module(DRAM加速器模块) DRAM CONTROLLER, XMA
From old datasheet system
Cypress Semiconductor, Corp.
EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA 256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的(200万?4Bank2)同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
Electronic Theatre Controls, Inc.
MT4C4001JCZ-10_883C MT4C4001JCZ-10_IT MT4C4001JCZ- 1 MEG x 4 DRAM Fast Page Mode DRAM
AUSTIN[Austin Semiconductor]
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A 5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
Alliance Semiconductor Corporation
ALSC
IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
Integrated Silicon Solution, Inc.
IBM03164B9C IBM0316809C 16Mb Synchronous DRAM(16M位同步动态RAM)
16MbMbit x 8 I/O x 2 Bank)Synchronous DRAM(16M位(1Mx 8 I/O x 2 组)同步动态RAM)
IBM Microeletronics
K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S1 2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
SAMSUNG SEMICONDUCTOR CO. LTD.
 
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