| PART |
Description |
Maker |
| PCHMB200A61 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| 7MBP200RA060 |
IGBT-IPM(600V/200A)
|
FUJI[Fuji Electric]
|
| 7MBP200RA060 |
IGBT-IPM(600V/200A)
|
Fuji Electric
|
| PCHMB200A6A |
IGBT MODULE Chopper 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PRHMB200A6A |
IGBT MODULE Chopper 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PDMB200A6 |
IGBT MODULE Dual 200a 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PBMB200E6 |
Full Bridge IGBT Module 200A/600V
|
Nihon Inter Electronics Corporation
|
| MIMMG200D060B6N |
600V 200A IGBT Module RoHS Compliant
|
Micross Components
|
| MSK4851H MSK4851 MSK4851E |
600V/200A THREE PHASE BRIDGE PEM WITH BRAKE
|
MSK[M.S. Kennedy Corporation]
|
| STI13005 STI13006 STI13002 STI13008 |
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 2A I(C) | TO-220
DIODE,SIDACTOR,275V,200A,2P,DO214AA,SMT,
晶体管|晶体管|叩| 600V的五（巴西）总裁| 1A条一c）|20
TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 8A I(C) | TO-220 晶体管|晶体管|叩| 600V的五（巴西）总裁| 8A条一（c）|20
|
STMicroelectronics N.V.
|
| BUK475-100A BUK475-100B |
PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)
PowerMOS transistor Isolated version of BUK455-100A/B
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 209CNQ150 209CNQ 209CNQ135 |
SCHOTTKY RECTIFIER 肖特基整流器
135V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
150V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
