| PART |
Description |
Maker |
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| BCW61 BCW60D BCW60C BCW60A BCW60B BCW61C/E9 BCW61S |
Small Signal Transistors (PNP)
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 100MA I(C) | SOT-23
|
VISAY[Vishay Siliconix]
|
| 2SA1036K 2SA854 2SA854S 2SA1577 A5800307 |
Medium Power Transistor (-32V/ -0.5A)
Medium Power Transistor (-32V, -0.5A)
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| BCY33A |
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.(32V, 0.1A)
|
Seme LAB
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SD166409 |
Medium Power Transistor (32V, 1A)
|
Rohm
|
| 2SA1577 |
Medium Power Transistor (-32V, -05A)
|
Rohm
|
| BCF30T/R |
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | SOT-23 晶体管|晶体管|进步党| 32V的五（巴西）总裁| 200mA的一（c）| SOT - 23封装
|
NXP Semiconductors N.V.
|
| T1G4003532-FS-15 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| L2SD1781KRLT1G L2SD1781KLT1 L2SD1781KQLT1 L2SD1781 |
Medium Power Transistor(32V, 0.8A) 中等功率晶体管（32V的，0.8A
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| L2SA1036KRLT1 L2SA1036KLT1 L2SA1036KLT1G L2SA1036K |
Medium Power Transistor(-32V, -0.5A) 中等功率晶体管（- 32V的，- 0.5A的）
|
Leshan Radio Company, Ltd.
乐山无线电股份有限公
LRC[Leshan Radio Company]
|
| 2SB1277 2SB1277R 2SB891FP 2SB891FQ 2SB891FR 2SB127 |
MEDIUM POWER TRANSISTOR(-32V, -2A) 中功率晶体管 32V的，- 2A型）
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
