| PART |
Description |
Maker |
| TPD1036F |
Intelligent power device 60V (Low side switch)
|
TOSHIBA
|
| UPD166013T1J UPD166013T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| TPD4104AK07 |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4124AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4125AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| UPD166019T1F UPD166019T1F-E1-AY |
Single P-Channel High-Side Intelligent Power Device
|
Renesas Electronics Corporation
|
| ATP213-TL-H ENA1526A ATP213 |
N-Channel Power MOSFET, 60V, 50A, 16mOhm, Single ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| ATP212-TL-H ATP21212 ENA1507A ATP212 |
N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| SLY2016 |
Alphanumeric Intelligent Display Device
|
Infineon
|
| IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 57A条）
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
