| PART |
Description |
Maker |
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TSHA4400 |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY SEMICONDUCTORS
|
| TSHA550009 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA6200 TSHA6202 TSHA620009 TSHA6201 TSHA6203 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| B39311-R771-U310 R771 |
Resonator 314,875 / 315,125 MHz
|
EPCOS AG
|
| 0875AS43A1850 |
875 MHz SPT4 GSM Antenna Switch Module
|
Johanson Technology Inc.
|
| TSTA7500 TSTA750008 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA4400 TSHA4401 TSHA440008 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| 9179 DB-915-12W |
12W / 12V / 875-915 MHZ PA USING 1X PD55015S
From old datasheet system
|
ST Microelectronics
|
| T7SH024.58GDN T72H024.58GDN T707063.258GDN T607021 |
706.5 A, SCR T7S, 3 PIN
706.5 A, SCR T72, 3 PIN
510.25 A, SCR T70, 3 PIN
196.25 A, SCR T60, 3 PIN
431.75 A, SCR T70, 3 PIN
392.5 A, SCR
109.9 A, 300 V, SCR
471 A, SCR
1177.5 A, SCR
785 A, SCR
942 A, SCR
2669 A, SCR
565.2 A, SCR
549.5 A, SCR
2512 A, SCR
1570 A, 700 V, SCR
235.5 A, SCR
62.8 A, SCR
1256 A, SCR
628 A, SCR
4710 A, SCR
1020.5 A, SCR
109.9 A, 150 V, SCR
1570 A, SCR
2826 A, SCR
3140 A, SCR
1727 A, SCR
|
Powerex, Inc.
POWEREX INC
|
| 1301800310 |
1 1/4 Cord Grip Grommet, F5 Body Size 19.05-22.23mm (.750-.875) Cord Diameter
|
Molex Electronics Ltd.
|
|
