| PART |
Description |
Maker |
| NTMFS08N2D5C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDD86326 |
N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
|
Fairchild Semiconductor
|
| FDD86250 |
FDD86250 N-Channel Shielded Gate PowerTrench? MOSFET 150 V, 50 A, 22 mΩ
|
Fairchild Semiconductor
|
| NTMD6601NR2G NTMD6601N |
80V 2.2A DUAL N-CHANNEL SO8
NFET S08D 80V
Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8
|
ON Semiconductor
|
| HIP4081A HIP4081AIB HIP4081AIP |
30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 80V/2.5A峰值，高频全桥FET驱动
80V/2.5A Peak/ High Frequency Full Bridge FET Driver
80V/2.5A Peak, High Frequency Full Bridge FET Driver
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HUF75542S3S HUF75542P3 FN4845 HUF75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|263AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A/ 80V/ 0.014 Ohm/ N-Channel/ UltraFET Power MOSFETs
75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FQB17N08 FQI17N08 FQB17N08TM FQI17N08TU |
80V N-Channel QFET
80V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MP1906 |
80V, Half-Bridge, Gate Driver
|
Monolithic Power Systems
|
| FDMS357207 FDMS3572 |
N-Channel UltraFET Trench? MOSFET 80V, 22A, 16.5m?/a>
N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| RFD3N08 RFD3N08L RFD3N08LSM FN2836 |
3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 3A0V的，0.800欧姆，逻辑层次，N沟道功率MOSFET
From old datasheet system
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
