| PART |
Description |
Maker |
| HY5MS7B2BLFP-6 |
16M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| MT46H8M16LFBF-54K MT46H4M32LFB5-5K |
8M X 16 DDR DRAM, 5 ns, PBGA60 8 X 9 MM, GREEN, PLASTIC, VFBGA-60
4M X 32 DDR DRAM, 5 ns, PBGA90
|
NEC, Corp.
|
| MT46H256M32LGCM-5A MT46H256M32L4CM-6A MT46H256M32L |
256M X 32 DDR DRAM, 5 ns, PBGA90
128M X 32 DDR DRAM, 5 ns, PBGA168
|
|
| H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5 |
128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
4M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| K4M51323PC K4M51323PC-SC K4M51323PC-SC1L K4M51323P |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Mobile-SDRAM
|
SAMSUNG[Samsung semiconductor]
http://
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB18M1G320BF HYE18M1G320BF-7.5 HYB18M1G320BF-7.5 |
DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM 8M X 32 DDR DRAM, 6.5 ns, PBGA90
|
Qimonda AG
http://
|
| K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S56323PF-FG K4S56323PF-F90 K4S56323PF-F75 K4S563 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NT5DS16M16BS-6KL |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
| HY5DU561622ELTP-JI |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU28822LT-K |
16M X 8 DDR DRAM, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
