PART |
Description |
Maker |
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
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Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IDT71V67602S150BQ IDT71V67802S150BQ IDT71V67802S15 |
3.3V 256K x 36 Synchronous 2.5V I/O PipeLined SRAM 3.3V 512K x 18 Synchronous 2.5V I/O PipeLined SRAM
|
IDT
|
K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS61LV6464 |
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI
|
K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P40 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
GS8322ZV18GE-225 GS8322ZV18GE-225I GS8322ZV18GB-22 |
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7 ns, PBGA209
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GSI Technology, Inc.
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71256T36-67 71256T36-75 GVT71256T18 71256T36-10 7C |
256K x 18 Synchronous-Pipelined Cache Tag RAM 256 × 18的同步高速缓存标记内存流水线 256K x 18 Synchronous-Pipelined Cache Tag RAM 256K X 18 CACHE TAG SRAM, 3.5 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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IDT71F432S75PF IDT71F432 IDT71F432L66PF IDT71F432L |
32k X 32 mcACHE synchronous pipelined cache ram 32K x 32Kcache synchronous pipelined cache RAM
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Integrated Device Techn... Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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IDT70V9269S IDT70V9269 IDT70V9269L IDT70V9269L12PR |
From old datasheet system 16K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 高.3 16K的16 SYNCHRONOU?流水线双端口静态RAM
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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IDT71V67603S166BGGI IDT71V67803S133PFG IDT71V67803 |
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 4.2 ns, PQFP100
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IDT INTEGRATED DEVICE TECHNOLOGY INC DB Lectro, Inc. Integrated Device Technology, Inc.
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