| PART |
Description |
Maker |
| PHMB400A6 |
IGBT MODULE Single 400A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| 2MBI400U2B-060 |
IGBT Module U-Series 600V / 400A 2 in one-package
|
List of Unclassifed Manufacturers
ETC
|
| PP400T060 |
POW-R-PAK 400A / 600V 3 phase IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2MBI400N-060 |
IGBT(600V,400A)
Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin
|
http://
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| FMG2G400LS60 |
600V, 400A IGBT Module (Molding Type)
Molding Type Module
|
Fairchild Semiconductor
|
| SD400N04PV SD400N08PV SD400N16PV |
400V 400A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 400A Std. Recovery Diode in a DO-205AB (DO-9)package
1600V 400A Std. Recovery Diode in a DO-205AB (DO-9)package
|
International Rectifier
|
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| 400U80D |
Diode Switching 800V 400A 2-Pin DO-9
|
Vishay Semiconductors
|
| MUR40040CT MUR40040CTR MUR40060CT MUR40060CTR |
Super Fast Recovery Diode, 400A
|
Naina Semiconductor ltd.
|
| 1MBI400HH-120L-50 |
IGBT MODULE 1200V / 400A / 1 in one package
|
Fuji Electric
|
