PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
BD243B ON0193 BD244C BD243C BD244B |
Complementary Silicon Plastic Power Transistors From old datasheet system 6 AMPERE POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON
|
Motorola Inc MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS High power NPN silicon transistor Silicon NPN switching transistor Silicon NPN transistor PNP power transistor Small signal NPN transistor Medium power NPN silicon transistor Dual npn-pnp complementary bipolar transistor Complementary power transistors NPN power transistors 模拟IC Analog IC 模拟IC
|
RECOM Electronic GmbH Vishay Intertechnology, Inc.
|
MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http:// ONSEMI[ON Semiconductor]
|
MJD122 MJD127 MJD127T4 ON1997 MJD122-1 MJD122T4 MJ |
From old datasheet system SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors
|
Motorola, Inc. MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
|
EMF5XV6T5 EMF5XV6T5G |
Power Management Dual Transistors Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
TIP31C TIP31B TIP31A ON2983 TIP32C TIP32A TIP32B |
3 AMPERE POWER TRANSISTORS From old datasheet system POWER TRANSISTORS COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
2SB514 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
MJ2955 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|