| PART |
Description |
Maker |
| 2DD2150R 2DD2150R-13 |
NPN SURFACE MOUNT TRANSISTOR
3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC, SOT89-3L, 4 PIN
|
Diodes Incorporated
Diodes, Inc.
|
| 2PD602A 2PD602AQ 2PD602AR 2PD602AS 2PD602ART/R |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 PLASTIC, SC-59, 3 PIN
NPN general purpose transistor
|
NXP Semiconductors N.V.
|
| DXT2222A-13 DXT2222A |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEEN, PLASTIC, SOT89-3L, 4 PIN
NPN SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470
TRANSISTOR|BJT|NPN|250VV(BR)CEO|100MAI(C)|TO-126
|
Continental Device India Limited
|
| 2SC2383 2SC2383-O 2SC2383-Y 2SC2383-15 |
NPN Plastic Encapsulated Transistor
NPN Plastic Encapsulated Elektronische Bauelemente Transistor
|
SeCoS Halbleitertechnol...
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| 2SD2142 |
NPN Plastic Plastic-Encapsulate Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| HBFP-0405-TR3 HBFP-0405-BLK |
KU BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PLASTIC, SC-70, 4 PIN
TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 12MA I(C) | SOT-343R 晶体管|晶体管|叩| 4.5VV（巴西）总裁| 12mA电流一（c）|的SOT - 343R
|
AGILENT TECHNOLOGIES INC
Agilent Technologies, Inc.
Fujitsu, Ltd.
|
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| CN451 CN450 |
General Purpose Transistors designed for Small and Medium Signal Amplification from D.C to Radio Frequencies
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 50 - 150 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 100 - 300 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
|
