| PART |
Description |
Maker |
| ISD4002-120 ISD4002-120E ISD4002-120ED ISD4002 ISD |
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
Single-Chip Voice Record/Playback Devices 120- 150- 180- and 240-Second Durations
|
N.A.
ETC[ETC]
|
| CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| MSK4324HU |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 BRUSHLESS DC MOTOR CONTROLLER, 15 A, CDFM43
|
M.S. Kennedy, Corp.
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| BSP92E-6327 BSP92E6327 |
0.2 A, 240 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET SOT-223, 4 PIN
0.2 A, 240 V, 50 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
SIEMENS A G
|
| CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| MMFT2406T1G MMFT2406T3 MMFT2406T3G MMFT2406T1 |
Power MOSFET 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 700 mA, 240 Volts
|
ONSEMI[ON Semiconductor]
|
| IXGQ240N30PB |
240 A, 300 V, N-CHANNEL IGBT TO-3P, 3 PIN
|
IXYS, Corp.
|
| 2SK2098-01MR 2SK2098 |
N-channel MOS-FET 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3 |
N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
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