| PART |
Description |
Maker |
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| TC514256AJ-10EL |
256K X 4 FAST PAGE DRAM, 100 ns, PDSO20
|
|
| AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| MT4C4256 MT4C4256-8 MT4C4256-12 MT4C4256-10 |
256K X 4RAM(FAST PAGE MODE)
256K x 4 DRAM
|
ETC[ETC]
Austin Semiconductor
List of Unclassifed Manufacturers
|
| MSM514256C-60JS |
256K X 4 FAST PAGE DRAM, 60 ns, PDSO20
|
LAPIS SEMICONDUCTOR CO LTD
|
| V104J9SU80 V104J9SU80L |
256K X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30
|
MOSEL-VITELIC
|
| LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| TC514256BZL-60 |
256K X 4 FAST PAGE DRAM, 60 ns, PZIP19 0.400 INCH, PLASTIC, ZIP-20/19
|
SIEMENS AG
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| V53C256A V53C256P80L V53C256XXXX |
(V53C256A Series) High Performance / Low Power 256k x 1-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
