PART |
Description |
Maker |
TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五(无线资源管理)| 223A我(翻译 High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五(无线资源管理)| 223A我(翻译 High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五(无线资源管理)| 223A我(翻译 High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五(无线资源管理)| 223A我(翻译
|
Infineon Technologies AG
|
SSTS20L60CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
SSBD1045D |
High Junction Temperature
|
Silikron Semiconductor ...
|
SSBD1045G |
High Junction Temperature
|
Silikron Semiconductor ...
|
SMA6F5.0A |
High junction temperature Transil
|
STMicroelectronics
|
SMA6J-85ATR SMA6J-85CATR SMA6J33A-TR STMICROELECTR |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC High junction temperature Transil
|
STMicroelectronics
|
SJXX12RXTP |
This SJxx12xx high junction temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls
|
Littelfuse
|
LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
MBR10H150CT MBRF10H150CT MBRB10H150CT-1 |
Dual High-Voltage Schottky Rectifiers, Forward Current 10A, Reverse Voltage 150V, Max. Junction Temperature 175C Diodes
|
VISAY[Vishay Siliconix]
|
BCR12CM-12LB BCR12CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
BCR30AM-12LB BCR30AM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
BCR10CM-12LB BCR10CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C) Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|