PART |
Description |
Maker |
CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
RFP8P06LE RFD8P06LESM RFD8P06LE FN4273 |
8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET From old datasheet system 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω,额定静电释放P沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
2N7002K-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Inc. Diodes, Inc.
|
2SJ486ZU-TL-E 2SJ486ZU-TR-E 2SJ486 |
300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3 Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
F12C40 F12C60 F12C30 F12C50 |
POWER RECTIFIERS(12A,300-600V) 大功率整流器(第12A ,300 - 600V的)
|
Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
MMBTA42LT1 |
300 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Rectron Semiconductor
|
BST120T/R |
300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP SEMICONDUCTORS
|
FQP3N30 |
300V N-Channel MOSFET 3.2 A, 300 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2N7002CK |
60 V, 0.3 A N-channel Trench MOSFET 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
6ES7-332-5HD01-0AB0 |
S7-300/M7-300 Programmable Controllers Module
|
Simatic
|
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