PART |
Description |
Maker |
HYMD216M646C6-H HYMD216M646C6-J HYMD216M646C6-K HY |
Unbuffered DDR SO-DIMM 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
THLD12N11B70 THLD12N11B75 |
16M X 64 DDR DRAM MODULE, 7 ns, DMA200 16M X 64 DDR DRAM MODULE, 7.5 ns, DMA200
|
|
K4H561638H-UIB00 K4H561638H-UICC0 |
16M X 16 DDR DRAM MODULE, 0.75 ns, PDSO66 LEAD FREE, TSOP2-66 16M X 16 DDR DRAM MODULE, 0.65 ns, PDSO66 LEAD FREE, TSOP2-66
|
Atmel, Corp.
|
MT36JSZF1G72PIZ-1G1XX MT36JSZF1G72PIZ-1G6XX MT36JS |
1G X 72 DDR DRAM MODULE, DMA240 HALOGEN FREE, MO-269, DIMM-240 512M X 72 DDR DRAM MODULE, DMA240
|
ON Semiconductor
|
HMP351U6AFR8C-S6 HMP351U6AFR8C-S5 HMP351U7AFR8C-S5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, UBDIMM-240 240pin DDR2 SDRAM Unbuffered DIMMs based on 2Gb A version 512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp. NEC Corp.
|
A48P4616B |
16M X 16 Bit DDR DRAM
|
AMIC Technology
|
HY5DU561622ELTP-L |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
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