| PART |
Description |
Maker |
| DPD8MX32RY5-70C DP3D8MX32RY5-70C DP3D8MX32RY5-60C |
8M X 32 FAST PAGE DRAM MODULE, 70 ns, QMA66
8M X 32 FAST PAGE DRAM MODULE, 60 ns, QMA66
8M X 32 FAST PAGE DRAM MODULE, 80 ns, QMA66
8M X 32 EDO DRAM MODULE, 60 ns, QMA66
|
Twilight Technology, Inc.
Alliance Semiconductor, Corp.
|
| Q67100-Q2009 Q67100-Q2010 321160X HYM321160GS-60 H |
1M x 32 Bit DRAM Module
From old datasheet system
1M x 32-Bit Dynamic RAM Module 1M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MSC2331B-80YS3 MSC2312CL-70YS9 |
256K X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30
1M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30
|
OKI ELECTRIC INDUSTRY CO LTD
|
| HYM641020GS-70 HYM641020GS-60 HYM641010GS-70 HYM64 |
1M x 64 Bit DRAM Module buffered
1M x 64-Bit Dynamic RAM Module 1M X 64 FAST PAGE DRAM MODULE, 70 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| MT8LD264G-7XS MT8LD264G-7S |
x64 EDO Page Mode DRAM Module
x64 Fast Page Mode DRAM Module X64的快速页面模式内存模
|
Micron Technology, Inc.
|
| HYM322160S-70 HYM322160S-60 HYM322160GS-60 HYM3221 |
2M x 32-Bit Dynamic RAM Module 2M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYM572103LNG-60 |
1M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| MOTOROLAINC-MCM32230SH80 MCM32230SHG80 MCM32L230SH |
2M X 32 FAST PAGE DRAM MODULE, 80 ns, SMA72
|
MOTOROLA INC
|
| HYM361110S-60 |
1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
|
SIEMENS A G
|
