| PART |
Description |
Maker |
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| EG3014 |
Power MOS tube / IGBT gate driver chip
|
EGmicro
|
| TLP70107 TLP701 |
IGBT/Power MOS FET gate drive
|
Toshiba Semiconductor
|
| APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| 7001218 700624 700610 700530 |
3M Moisture Barrier Bag Dri-Shield 2000
3M Moisture Barrier Bag Dri-Shield 2000
|
3M Electronics
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
| APT40GP60JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP90B2DQ2 APT40GP90B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
