| PART |
Description |
Maker |
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
| PS9402-V PS9402-E3 PS9402-V-E3 |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
Renesas Electronics Corporation
|
| TLP350 |
Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter
Photocouplers - Photo-IC Output
|
Toshiba Semiconductor
|
| APT50M80LLC APT50M80B2LC |
POWER MOS IV 500V 58A 0.080 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HCPL-3101 HCPL-3100 |
Power MOSFET/IGBT Gate Drive Optocouplers(功率 MOSFET/IGBT门驱动耦合 功率MOSFET / IGBT栅极驱动光电耦合器（功率MOSFET IGBT的门驱动耦合器）
Power MOSFET-IGBT Gate Drive Optocouplers
|
Agilent / Hewlett-Packard
|
| APT15GP90BDQ1G APT15GP90BDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
