| PART |
Description |
Maker |
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| EG3014 |
Power MOS tube / IGBT gate driver chip
|
EGmicro
|
| TLP70107 TLP701 |
IGBT/Power MOS FET gate drive
|
Toshiba Semiconductor
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| PS9402-15 |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
Renesas Electronics Corporation
|
| APT50M80LLC APT50M80B2LC |
POWER MOS IV 500V 58A 0.080 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| APT5015BLC |
POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 5962-0420501HYC 5962-0420501HPA 5962-0420501HXA 59 |
0.5 Amp Output Current IGBT Gate Drive Optocoupler 0.5安培输出电流IGBT栅极驱动光电耦合
5962-0420501HYC · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HPA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HXA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HYA · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420501HPC · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-200 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-300 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5151-200 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5150-100 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5151-100 · 0.5 Amp Output Current IGBT Gate Drive Optocoupler
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| APT30GP60BDQ1 APT30GP60BDQ1G |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
