| PART |
Description |
Maker |
| TC55B4256J TC55B4256P |
256K x 4-Bit BiCMOS Static RAM
|
Toshiba
|
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| TC55B8128J |
128K x 4-Bit BiCMOS Static RAM
|
Toshiba
|
| TC55B328P |
32K x 8-Bit BiCMOS Static RAM
|
Toshiba
|
| KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| PDM41257SA7SOTY PDM41257SA7SOTR PDM41257LA7SOTY PD |
256K static RAM 256K x 1-bit
x1 SRAM
|
PARADIGM
|
| PD464536L PD464518L |
4M-Bit Bi-CMOS Synchronous Fast Static RAM(4M BiCMOS 同步快速静态RAM)
|
NEC Corp.
|
| MCM63Z818TQ100R MCM63Z818TQ100 MCM63Z818TQ133R MCM |
128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|
| IDT100494BS7C IDT101494BS8C IDT101494BS8Y IDT10049 |
HIGH-SPEED BiCMOS ECL STATIC RAM 64K (16K×4-BIT) SRAM
HIGH-SPEED BICMOS ECL STATIC RAM 64K (16K】4-BIT) SRAM
|
Integrated Device Technology
|
| KM616U4000B |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| PDM41256LA8TTY PDM41256SA8TA PDM41256LA8TATY PDM41 |
256K static RAM 32K x 8-bit
|
PARADIGM
|
