| PART |
Description |
Maker |
| NE3512S02 NE3512S02-T1C-A NE3512S02-T1D-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR 异质结型场效应晶体管
|
California Eastern Laboratories, Inc.
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| 2SK3230C |
JUNCTION FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
| 2N3456 |
N-CHANNEL SILICON JUNCTION FIELD-EFFECT
|
New Jersey Semi-Conductor Products, Inc.
|
| NJ132 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| 2N3823 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|
MICRO-ELECTRONICS[Micro Electronics]
|
| 2N5486 2N5484 2N5485 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| NJ903 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ1800DL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ42 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| SMPJ212 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
