PART |
Description |
Maker |
RJK6025DPH-E0 RJK6025DPH-E0T2 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6011DJE-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6024DPE RJK6024DPE-15 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL60S5DPK-M0 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|
2SK2112 D11232EJ2V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING From old datasheet system MOS Field Effect Transistor
|
NEC[NEC]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|