| PART |
Description |
Maker |
| 2SJ602 2SJ602-S 2SJ602-ZJ 2SJ602-Z |
MOS FIELD EFFECT TRANSISTOR
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0632-3 00; No. of Positions: 30; Connector Type
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263
|
NEC Corp.
|
| FCA20N60F109 |
Discrete MOSFET
|
Fairchild Semiconductor
|
| TSM028N04PQ56 |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM40N03PQ56 |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM070N07PQ56 |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM3N80CI TSM3N80CP TSM3N80CZ |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM2N7000KCT |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| IXTA1N100 IXTP1N100 |
Discrete MOSFETs: Standard N-channel Types
High Voltage MOSFET
|
IXYS[IXYS Corporation]
|
| IXTH6N120 IXTT6N120 |
Discrete MOSFETs: Standard N-channel Types
High Voltage Power MOSFET
|
IXYS[IXYS Corporation]
|
| FDS3992_04 FDS3992 FDS3992NL FDS399204 |
Dual N-Channel PowerTrench? MOSFET 100V, 4.5A, 62m?/a>
Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| HI3-0201HS4 HI3-0201HS5 HI1-0201HS2 HI1-0201HS5 HI |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0414-4 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
|
Intersil, Corp.
|
| FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
