PART |
Description |
Maker |
S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
VTS3186 VTS3086 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
1SS301 |
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Ultra High Speed Switching Application
|
TY Semiconductor Co., Ltd TY Semicondutor
|
LO503NBG1-15Q |
Blue green 15 degrees 5 mm LED lamp with water transparent lens. Wavelength(typ.) 505 nm. Luminous intensity(typ.) 4500 mcd.
|
Marktech Optoelectronics
|
CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S) MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
IRFP23N50LPBF |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A ) HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
International Rectifier
|
STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz 8485D Diode Power Sensor, 50 MHz to 26.5 GHz Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz W8486A Waveguide Power Sensor, 75 GHz to 110 GHz R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz E4412A Wide Dynamic Range Power Sensor, E-Series E4413A Wide Dynamic Range Power Sensor, E-Series V8486A V-band Power Sensor, 50 GHz to 75 GHz 8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W 8487A Power Sensor, 50 MHz to 50 GHz 8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W 8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
KDD2572 |
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V
|
TY Semiconductor Co., Ltd
|