| PART |
Description |
Maker |
| 567UVG010MFBJ 187UVG016MFBJ |
High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
|
Illinois Capacitor, Inc...
|
| NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc.
|
| 3141 A3143 UGN3120ELT UGN3120EUA UGN3120LLT UGN312 |
SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 敏感的霍尔效应开关高温作
IC SENSOR 1 CHAN QTOUCH SOT23-6
(UGN3141 - UGN3144) SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Sensitive Hall-Effect Switches, High-Temperature
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
http://
|
| 125293U020AJ1B 125114U005AJ1B 125114U6R3AC1B 12523 |
The Pace-Setter for Long Life and High Temperature
Type 125 -55 篓卢C to 125 篓卢C, Ultra-High Temperature, Military Grade
Type 125 -55 潞C to 125 潞C, Ultra-High Temperature, Military Grade
Type 125 -55 oC to 125 oC, Ultra-High Temperature, Military Grade
Type 125 -55 ìC to 125 ìC, Ultra-High Temperature, Military Grade
|
Cornell Dubilier Electr...
List of Unclassifed Man...
ETC
List of Unclassifed Manufacturers
http://
Cornell Dubilier Electronics
|
| SMM4FXXA-TR SMM4F28A SMM4F24A SMM4F20A SMM4F15A SM |
High junction temperature Transil?/a>
High junction temperature Transil⑩
|
STMicroelectronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| T2035H-600TRG T2035H-600G-TR T2035H T2035H-600G T2 |
Snubberless?/a> high temperature 20 A Triacs
Snubberless high temperature 20 A Triacs
Snubberless⑩ high temperature 20 A Triacs
|
STMicroelectronics
|
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| SS2PH9-E3_84A SS2PH9-E3_85A SS2PH9HE3_84A SS2PH9HE |
High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
