| PART |
Description |
Maker |
| 7MBR15UF060 |
Power Integrated Module 15 A, 600 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
| MIG20J906E MIG20J906EA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG25Q806H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| M57145L-01 |
HYBRID IC FOR ON-BOARD POWER SUPPLY
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 7MBR15PE120 |
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| QC962 |
Hybrid Integrated IGBT Driver
|
MORNSUN Science& Technology Ltd.
|
| AM29LV040B-60REC AM29LV040B-70JC AM29LV040B-60RFC |
x8 Flash EEPROM
450V Hybrid Controller IC and HEXFET Power MOSFET for Indirect Feedback Quasi-Resonant including low frequency PRC Fly-Back Converter type SMPS Applications packaged in a 5-Lead TO-220
30W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
650V Hybrid Controller IC and HEXFET Power MOSFET for Quasi-Resonant including low frequency PRC Fly-Back Converter type SMPS Applications packaged in a 5-Lead TO-220
60W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
180W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
650V Hybrid Controller IC and HEXFET Power MOSFET for Pulse Ratio Control Fly-Back Converter type SMPS Applications packaged in a 8-Lead PDIP
650V Hybrid Controller IC and HEXFET Power MOSFET for Quasi-Resonant including low frequency PWM Fly-Back Converter type SMPS Applications packaged in a 6-Lead TO-220
120W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
600V Copack IGBT in a D2-Pak package x8闪存EEPROM
600V Copack IGBT in a TO-220AB package x8闪存EEPROM
60W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
|
Unisonic Technologies Co., Ltd.
Advanced Micro Devices, Inc.
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
