PART |
Description |
Maker |
WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
IXFH18N100Q3 |
HiperFETTM Power MOSFETs Q3-Class
|
IXYS Corporation
|
IXFH15N100Q3 IXFT15N100Q3 |
HiperFETTM Power MOSFETs Q3-Class
|
http:// IXYS Corporation
|
IXFT7N90Q IXFH7N90Q |
HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
IXFN62N80Q3 |
HiperFETTM Power MOSFET Q3-Class
|
IXYS Corporation
|
IXFR120N20 |
HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
IXFR24N100 |
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)
|
IXYS Corporation
|
FMM75-01F |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM From old datasheet system
|
IXYS[IXYS Corporation]
|
IXFE50N50 IXFE55N50 |
HiPerFETTM Power MOSFET 50 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS
|
IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol HiPerFETTM Power MOSFETs MOSFET with FAST Intrinsic Diode Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|