| PART |
Description |
Maker |
| HB28L064RM3 HB28J128MM3 HB28J128RM3 HB28J256MM3 HB |
MultiMediaCard 32 MByte/64 MByte/128 MByte/256 MByte/512 MByte
|
RENESAS[Renesas Electronics Corporation]
|
| S25FL127S |
128 Mbit (16 Mbyte) MirrorBit Flash Non-Volatile Memory
|
SPANSION
|
| FL116K FL132K FL164K |
16 Mbit (2 Mbyte), 32 Mbit (4 Mbyte), 64 Mbit (8 Mbyte) 3.0V SPI Flash Memory
|
Cypress Semiconductor
|
| HB28H016MM2 HB28B064MM2 HB28B128MM2 HB28D032MM2 |
MultiMediaCard 16 MByte/32 MByte/64 MByte/128 MByte
|
RENESAS[Renesas Electronics Corporation]
|
| S29WS512P0LBAW003 S29WS512P0LBFW000 S29WS512P0PBAW |
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
|
SPANSION[SPANSION]
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M48T512Y10 M48T512V-70PM1 M48T512Y-70PM1 M48T512V- |
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| L2562ML12RI AM29LV2562MH120PII |
512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
Advanced Micro Devices
|
