| PART |
Description |
Maker |
| HFA40HF60 |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package
Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| 1N5619 |
Diode Switching 600V 2A 2-Pin Case G-2
|
New Jersey Semiconductor
|
| 40HFLR60S02 40HFLR20S05 |
Diode Switching 600V 40A 2-Pin DO-5
Diode Switching 200V 40A 2-Pin DO-5
|
New Jersey Semiconductor
|
| 22N60 22N60G-T47-T 22N60L-T47-T 22N6011 |
22A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RJP60V0DPM-80T2 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 70HFL100 70HFLR100S05 70HFLR10S02 70HFL40 |
Diode Switching 100V 70A 2-Pin DO-5
Diode Switching 1KV 70A 2-Pin DO-5
Diode Switching 400V 70A 2-Pin DO-5
|
New Jersey Semiconductor
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| 1N4161 1N4163 1N4167 1N4162 1N4165 1N4168 1N4158 1 |
Diode Zener 18V 5% 1W 2-Pin DO-29
Diode Small Signal Switching 35V 0.3A Automotive 2-Pin DO-35
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
